发明名称 Manufacturing method of semiconductor integrated circuit device
摘要 To provide a semiconductor integrated circuit device having improved reliability. An EFEM unit upstream of a plasma processing unit is equipped with a chemical filer for alkali removal. In the plasma processing unit, a semiconductor wafer is subjected to plasma processing with a gas containing fluorine. The resulting semiconductor wafer is put in a carrier via a transfer chamber, load lock chamber and EFEM chamber. During this operation, the concentration of amines in the EFEM chamber is adjusted to be lower than that of amines in a clean room outside the chamber by a chemical filter.
申请公布号 US2006278612(A1) 申请公布日期 2006.12.14
申请号 US20060448032 申请日期 2006.06.07
申请人 TOKUNAGA KENJI;KAWAI KAZUHIKO;TERAKADO SAKAE 发明人 TOKUNAGA KENJI;KAWAI KAZUHIKO;TERAKADO SAKAE
分类号 C03C25/68;B44C1/22;C23F1/00;H01L21/302 主分类号 C03C25/68
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