发明名称 |
Manufacturing method of semiconductor integrated circuit device |
摘要 |
To provide a semiconductor integrated circuit device having improved reliability. An EFEM unit upstream of a plasma processing unit is equipped with a chemical filer for alkali removal. In the plasma processing unit, a semiconductor wafer is subjected to plasma processing with a gas containing fluorine. The resulting semiconductor wafer is put in a carrier via a transfer chamber, load lock chamber and EFEM chamber. During this operation, the concentration of amines in the EFEM chamber is adjusted to be lower than that of amines in a clean room outside the chamber by a chemical filter.
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申请公布号 |
US2006278612(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20060448032 |
申请日期 |
2006.06.07 |
申请人 |
TOKUNAGA KENJI;KAWAI KAZUHIKO;TERAKADO SAKAE |
发明人 |
TOKUNAGA KENJI;KAWAI KAZUHIKO;TERAKADO SAKAE |
分类号 |
C03C25/68;B44C1/22;C23F1/00;H01L21/302 |
主分类号 |
C03C25/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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