METHOD OF PROGRAMMING NON-VOLATILE MEMORY CELL AND ITS CONSTITUTION OBJECT

摘要

PROBLEM TO BE SOLVED: To provide a programming method by which a program time of a non-volatile memory cell can be shortened.

SOLUTION: A method and arrangement are provided for programming an electrically erasable programmable read only memory cell capable of storing at least one information bit. The memory cell 1 has a charge-trapping region. According to the invention, during a first period of time, fixed voltage is applied to the memory cell to inject and store electrical charge in the charge-trapping region. This period of time is followed by a second period of time during which a constant current is applied to the memory cell to complete the programming step. By monitoring change in voltage during the second period of time, resulting threshold voltage can be monitored directly during programming.

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