| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device using a sense amplifier circuit suitable for large capacity cell array. <P>SOLUTION: The semiconductor memory device has at least first and second memory areas in which nonvolatile memory cells electrically re-writable are arranged at respective intersection parts of word lines and bit lines crossing each other, a first sense amplifier array in which sense amplifiers used for reading data of the first memory cell array are arranged at end parts of the first memory cell array opposite to the second memory cell array, a second sense amplifier array in which sense amplifiers used for reading data of the second memory cell array are arranged at end parts of the second memory cell array opposite to the first memory cell array, and a third sense amplifier array in which sense amplifiers used for selectively reading data of the first and the second memory cell array are arranged between the first and the second memory cell arrays. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
