| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a plane emission type semiconductor laser having a satisfactory production yield. SOLUTION: The method for manufacturing the plane emission type semiconductor laser 100 of this invention comprises the steps of laminating a semiconductor layer for structuring on a substrate 101 a first mirror 102, an activated layer 103, a second mirror 104, an etching stopper layer 120, and a contact layer 122; forming a columnar part including at least a part of the second mirror 104 by patterning the semiconductor layer; forming an electrode 107 over the contact layer 122; and etching a part of the contact layer 122 to the extend that the upper surface of the etching stopper layer 120 is exposed. COPYRIGHT: (C)2007,JPO&INPIT
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