| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the generation of substrate currents is suppressed by the operation of a rectifying circuit. <P>SOLUTION: In the semiconductor device having a rectifying circuit and an integrated circuit in a first conductivity type semiconductor substrate 10, there are provided a second conductivity type first well region 12 formed in the first conductivity type semiconductor substrate, a first conductivity type second well region 14 formed in the first well region, and a second conductivity type diode region 16 formed in the second well region and for constituting a diode out of it and the second well region. Further, the rectifying circuit is so configured by using the plurality of diodes as to suppress the generation of current noises in the semiconductor substrate of the region wherein the integrated circuit is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
