发明名称 |
Write line design in MRAM |
摘要 |
A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.
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申请公布号 |
US2006278908(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20060505141 |
申请日期 |
2006.08.16 |
申请人 |
LIN WEN C;TANG DENNY;LAI LI-SHYUE;WANG CHAO-HSIUNG |
发明人 |
LIN WEN C.;TANG DENNY;LAI LI-SHYUE;WANG CHAO-HSIUNG |
分类号 |
G11C11/15;H01L29/94;G01F1/00;G11C5/06;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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