CYCLOPENTADIENYL TYPE HAFNIUM AND ZIRCONIUM PRECURSORS AND USE THEREOF IN ATOMIC LAYER DEPOSITION

摘要

Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula (I): (R¹Cp)₂MR² R³ wherein Cp represents a cyclopentadienyl ligand, R¹ is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R² and R³ is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.