ION SOURCE AND ION IMPLANTER HAVING THE SAME

摘要

An ion source and an ion implantation apparatus having the same are provided to reduce impurity flowed in a gap between an opening unit and a filament by forming an inner diameter of the opening unit greater than a diameter of the filament. An arc chamber(110) provides a space for ionizing a source gas and includes a base plate(112) having an opening unit(126). A filament(130) is installed through the opening unit and emits electrons for ionizing the source gas into the arc chamber. The opening unit has an inner diameter to make a gap between the opening unit and the filament have 1 mm to reduce impurity flowed in the gap. A gas supplying unit(120) is formed on the base plate to supply the source gas into the arc chamber. An ion extraction unit(116) is formed on a sidewall of the arc chamber facing the base plate to extract ions generated in the arc chamber.