| 摘要 |
A nonvolatile memory element includes a first material region, a second material and an oxidation material region including an oxidation material as a memory material region. The oxidation material includes an oxidized form of the first material and/or an oxidized form of the second material. The first material is selected such that its oxidized form is formed in comparatively high-resistance fashion. The second material is selected such that its oxidized form is formed in comparatively low-resistance fashion. |
