发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A method for manufacturing a semiconductor integrated circuit device is provided to improve a yield of a probe test by using a membrane probe. A semiconductor wafer divided into a plurality of chip regions is prepared. A semiconductor integrated circuit is formed in each of the chip regions. A plurality of first electrodes are formed on a main face on the semiconductor wafer to be electrically connected to the semiconductor integrated circuit. A first card is prepared. The first card includes a wiring substrate, a plurality of first sheets, a plurality of sheet holding units, a plurality of third wirings, and a plurality of pressing units. The semiconductor integrated circuits are electrically tested by contacting tips of contact terminals with the first electrodes.
申请公布号 KR20060128685(A) 申请公布日期 2006.12.14
申请号 KR20060051152 申请日期 2006.06.07
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHOJI TERUO;HASEBE AKIO;DEGUCHI YOSHINORI;MURAKAMI MOTOJI;OKAMOTO MASAYOSHI;NARIZUKA YASUNORI;KAZUKABE SUSUMU
分类号 H01L21/66 主分类号 H01L21/66
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