FORMING METHOD FOR CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a capacitor of a semiconductor device is provided to prevent degradation of electrical characteristics during a capacitor forming process by employing ALD(Atomic Layer Deposition) for forming a metal silicide layer. A capacitor interlayer dielectric(102) is formed on a semiconductor substrate(100) where a predetermined lower structure and a contact plug are formed. A contact hole(108) opening the contact plug is formed on the capacitor interlayer dielectric. A metal silicide layer(112) is deposited on the whole surface of the capacitor interlayer dielectric where the contact hole is formed by ALD. A capacitor lower electrode(114) is formed on the metal silicide layer. The metal silicide layer and the capacitor lower electrode on an upper surface of the capacitor interlayer dielectric are removed. The capacitor interlayer dielectric is selectively eliminated. A capacitor dielectric and a capacitor upper electrode are sequentially formed on the capacitor lower electrode.