| 摘要 |
PROBLEM TO BE SOLVED: To realize a highly reliable capacitive element with a stereoscopic structure by increasing polarization quantity by applying a tensile stress to a capacitive element, and preventing the deterioration of the capacitive element due to moisture. SOLUTION: A second inter-layer insulating film 5 having an opening is formed on a semiconductor substrate 1. Further, a lower electrode 7 covering the bottom face and wall face of the opening, a capacitive insulating film 8 constituted of a ferroelectric covering the lower electrode 7, and an upper electrode 9 covering the capacitive insulating film 8, are formed. A stress control layer 11 having a tensile stress is formed on the upper electrode 9, and the stress control layer 11 is made to function as the diffusion barrier of moisture. COPYRIGHT: (C)2007,JPO&INPIT
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