| 摘要 |
PROBLEM TO BE SOLVED: To provide a method easily locating a failure place of a semiconductor circuit chip. SOLUTION: This method comprises processes of: dividing light radiated from a white light source 109 into reference light and signal light by a beam splitter 102; emitting the signal light to a sample 107 through a Morou interferometer 105; making light reflected from the sample surface with the reference light and imaging the interference intensity occurring in the Morou interferometer 105; and applying voltage current to the semiconductor circuit chip as the sample. When current-carrying is performed in a wiring part of the semiconductor circuit chip, the defect section such as void has a smaller sectional area than that of a normal section, and hence the current density becomes large enough to generate heat. By obtaining the volume change, the failure place is easily located. COPYRIGHT: (C)2007,JPO&INPIT
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