发明名称 |
Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices |
摘要 |
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.
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申请公布号 |
US2006278921(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20060411982 |
申请日期 |
2006.04.26 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PELLIZZER FABIO;PIROVANO AGOSTINO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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