发明名称 |
Nonvolatile semiconductor memory device and method of manufacturing the same |
摘要 |
A semiconductor memory device includes a semiconductor substrate. Two diffusion layers are separately arranged along a first direction on the surface of the semiconductor substrate and include impurities. Two element separation layers are separately arranged along a second direction in a surface of the semiconductor substrate and define an element region. A first insulating layer is disposed on the substrate. A first conductive layer is disposed on the first insulating layer between the two diffusion layers and between the two element separation layers. A second conductive layer is disposed on the first conductive layer and is smaller than the first conductive layer in the first direction and the second direction. A second insulating layer is disposed on the second conductive layer. A third conductive layer is disposed on the second insulating layer.
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申请公布号 |
US2006281244(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20060447941 |
申请日期 |
2006.06.07 |
申请人 |
ICHIGE MASAYUKI;ARAI FUMITAKA;SATO ATSUHIRO |
发明人 |
ICHIGE MASAYUKI;ARAI FUMITAKA;SATO ATSUHIRO |
分类号 |
H01L21/8238;H01L29/94 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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