| 摘要 |
<p>A phase change memory and a method for manufacturing the same are provided to obtain uniform heat range and rapid heat transfer by using an improved phase change layer. A phase change memory(100) includes a lower electrode(120), a contact part(140) of double trench structure connected to the lower electrode, a phase change layer(160) formed in the double trench structure, and an upper electrode(180) connected to the phase change layer. The phase change layer is composed of NDM(Nucleation Dominant Material) of Ge-Sb-Te group. Also, the phase change layer is composed of FGM(Fast Growth Material) of Sb70Te30 group.</p> |
