| 摘要 |
A method for fabricating a capacitor of a semiconductor memory device, a semiconductor memory device using the same, and a method for manufacturing the semiconductor memory device are provided to obtain capacitance without increasing a capacitor area by forming a trench-type capacitor. An isolation layer(205) is formed in a semiconductor substrate(200) to define an active region. Ion implantation is performed on a predetermined part of the active region to form an impurity region(211). A dielectric(231) is formed on the semiconductor substrate. A mask pattern is formed on the dielectric to expose its part corresponding to a part of the isolation layer adjacent to an upper surface and a side of the impurity region. The exposed dielectric and the part of the isolation layer are etched by using the mask pattern to form a storage node contact hole, a first trench(236), and a second trench(237). The first trench is connected to the storage node contact hole and formed on the isolation layer to be adjacent to a side of the impurity region. The second trench is connected to the storage node contact hole and formed on the isolation layer to a side opposite to the side of the impurity region. The storage node contact hole is formed to expose an upper surface of the impurity region, the first trench, and the second trench. A first dielectric(260) is formed in the first trench to be adjacent to the side of the impurity region. A second dielectric(261) is formed in the second trench to be adjacent to the side opposite to the side of the impurity region. A conductive layer is formed on the dielectric to gap-fill the storage node contact hole, the first trench, and the second trench. The conductive layer is etched to form a first electrode plug on the first dielectric in the first trench, a second electrode plug on the second dielectric in the second trench, and a storage node contact plug(244) connected to the first electrode plug and the second electrode contact plug in the storage node contact hole. A storage node is formed to be connected to the storage node contact plug. A third dielectric and a plate node are formed on the dielectric where the storage node is formed.
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