| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which a stress acting between a semiconductor and the metal of an electrode can be relaxed. SOLUTION: The process for fabricating a CMOS (semiconductor device) comprises a step for forming a gate insulating film 6 on a silicon substrate 1, a step for forming an amorphous silicon layer 70 on the gate insulating film 6, a step for forming a Ru layer 8 containing ruthenium (Ru) composing the gate electrode 10 on the amorphous silicon layer 70, and a step for forming a ruthenium silicide (Ru-Si) layer 7 having content of ruthenium higher than that of silicon on the interface of the gate insulating film 6 and the Ru layer 8 through the reaction of the amorphous silicon layer 70 and ruthenium. COPYRIGHT: (C)2007,JPO&INPIT
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