| 摘要 |
A high-voltage MOS device includes a substrate; a drift ion well formed in the substrate; a first isolation region formed in the drift ion well; a gate electrode formed on the substrate and covering a portion of the first isolation region; a drain doping region disposed adjacent to the first isolation region on an opposite side to the gate electrode; a second isolation region formed in the drift ion well, the second isolation region being disposed adjacent to the drain doping region on an opposite side to the first isolation region; and a first dummy diffusion region in the drift ion well, the dummy diffusion region being disposed at a side of the second isolation region opposite to the drain doping region.
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