发明名称 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane |
摘要 |
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.
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申请公布号 |
US2006281201(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20060451298 |
申请日期 |
2006.06.13 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HACHIGO AKIHIRO;NISHIURA TAKAYUKI;ISHIBASHI KEIJI |
分类号 |
H01L21/66;G01N21/00;G01N21/21;G01N21/27;G01N21/956;G01R31/26;H01L33/00;H01L33/32 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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