发明名称 Driving circuit for use with high voltage bidirectional semiconductor switches
摘要 A driving circuit for a half bridge utilizing bidirectional semiconductor switches in accordance with an embodiment of the present application includes a high side driver operable to control a high side bidirectional semiconductor switch, wherein the high side driver provides a negative bias voltage to the bidirectional semiconductor switch to turn the high side bidirectional semiconductor switch OFF. A low side driver may be operable to control a low side bidirectional semiconductor switch. An external voltage source with a negative terminal of the voltage source connected to the high side driver may be provided. A high side driving switch may be positioned between the negative terminal of the voltage source and the high side driver and operable to connect the high side driver to the negative terminal of the voltage source when the low side driver turns the low side bidirectional semiconductor switch ON.
申请公布号 US2006279351(A1) 申请公布日期 2006.12.14
申请号 US20060402109 申请日期 2006.04.11
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 SALATO MAURIZIO;SOLDANO MARCO
分类号 H03H11/40 主分类号 H03H11/40
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