发明名称 |
SELF-ALIGNED CONDUCTIVE SPACER PROCESS FOR SIDEWALL CONTROL GATE OF HIGH-SPEED RANDOM ACCESS MEMORY |
摘要 |
A self-aligned conductive spacer process for fabricating sidewall control gates on both sides of a floating gate for high-speed RAM applications, which can well define dimensions and profiles of the sidewall control gates. A conductive layer is formed on the dielectric layer to cover a floating gate patterned on a semiconductor substrate. Oxide spacer are formed on the conductive layer adjacent to the sidewalls of the floating gate. Performing an anisotropic etch process on the conductive layer and using the oxide spacers as a hard mask, a conductive spacers are self-aligned fabricated at both sides of the floating gate, serving as sidewall control gates.
|
申请公布号 |
US2006281254(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20050148342 |
申请日期 |
2005.06.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE TZYH-CHEANG;YANG FU-LIANG;HWANG JIUNN-REN;LEE TSUNG-LIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|