| 摘要 |
An electrostatic protection device is provided to prevent degradation of electrostatic discharge protection characteristics by employing a silicide region formed on a drain region. A gate electrode(210) is formed on a semiconductor substrate(200). Source and drain regions(220,230) are located on both sides of the gate electrode. Plural contact(250) are arranged in a line to be separated from the source and the drain region at a regular interval. A silicide region(240) is formed on a certain region including the contacts with a predetermined depth. A volume between the contacts is greater than that of a region adjacent to the respective contacts in the silicide region formed on the drain region. A width of the silicide region formed on the drain region is increased in proportion to a distance between the contacts located in the drain region and inversely proportional to a resistance ratio of a region where the silicide is not formed for the silicide region.
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