TOP COATING COMPOSITION FOR PHOTORESIST, AND METHOD FOR FORMING PHOTORESIST PATTERNS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a top coating composition for photoresist which is usable in the immersion lithography and to provide a method for forming photoresist patterns using the same.

SOLUTION: The top coating composition comprises a polymer having at least three different structures of repeating groups comprising a first repeating unit having a carboxylic group substituted with an alkyl protection group or an acid-decomposable group, a second repeating group having an acid group and a third repeating group having a polar group, and an organic solvent containing an alcohol.

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