| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of improving the yield of devices formed by microfabrication by realizing a process in a dust-free clean atmosphere. SOLUTION: The plasma processing apparatus is provided with a vacuum chamber 1, an evacuation means for evacuating the vacuum chamber, a gas introducing means for introducing a gas into the vacuum chamber, an electrode for disposing an object to be processed thereon, and an antenna 5 arranged facing the electrode in the vacuum chamber 1. The antenna 5 is covered with an antenna cover 21 which is made of a ceramic and has an uneven shape in its surface. The uneven shape consists of a first uneven shape 23 having a top-to-bottom height difference of 10-30μm and a further fine second uneven shape 24 having a top-to-bottom height difference of 1-5μm formed on the surface of the first uneven shape 23. The first uneven shape 23 has 15-30 high-low cycles within the range of 1 mm. COPYRIGHT: (C)2007,JPO&INPIT
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