| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of improving charge holding characteristics of a nonvolatile memory. SOLUTION: In a memory cell, an interlayer insulating film is formed which consists of an ONO film in which a lower layer silicon oxide film 6, silicon nitride film 7, and upper layer silicon oxide film 8 are stacked between a floating gate 5 of a polycrystalline silicon film and a control gate of a polycrystalline silicon film. The upper layer silicon oxide film 8 is formed by an LPCVD method and which is nitrided by a remote plasma method. Nitrogen of, for example, 5-6 atom% is introduced to the upper surface side of the upper layer silicon oxide film 8. COPYRIGHT: (C)2007,JPO&INPIT
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