| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which component isolation of a semiconductor layer formed on an insulator is performed stably while suppressing increase in number of steps and current leak by a parasitic transistor is suppressed, and to provide its fabrication process. SOLUTION: A surface 9 for exposing a part of the end portions of a first semiconductor layer 5 and a second semiconductor layer 6 is formed in an insulating film 8 and a sacrifice oxide film 4 such that the insulating film 8 is left under a gate electrode 14 without fail. A cavity 10 is formed between a semiconductor substrate 1 and the second semiconductor layer 6 by touching etching gas or etching liquid to the first semiconductor layer 5 through the exposing surface 9. A buried insulating layer 11 is then formed in the cavity 10 between the semiconductor substrate 1 and the second semiconductor layer 6 by performing thermal oxidation of the semiconductor substrate 1 and the second semiconductor layer 6. COPYRIGHT: (C)2007,JPO&INPIT
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