| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method that decreases pattern difference and that performs uniform processings, and to provide a manufacturing method of a semiconductor device using the same, in a multilayered film containing a number of films having different gas permeabilities. SOLUTION: In a structure where a mask 1, an upper layer film 2, and a lower layer film 3 are laminated, the system has a step for waiting for degassing from the lower layer film 3 before etching the lower layer film 3, after etching the upper layer film 2 with a plasma 10. COPYRIGHT: (C)2007,JPO&INPIT
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