| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for epitaxially growing an InP thin film at low temperature. SOLUTION: For expitaxial crystal growth of a compound semiconductor thin-film laminated wafer, the InP thin film is grown at low temperature through a raw material supply stage wherein TEI as group III organic metal and PH3 and TEP as group V materials are preheated in a thin tube at 50°C and mixed about 15 mm right, before an epitaxially crystal grown wafer to immediately be subjected to reaction to produce a chain compound and a high-efficiency decomposition stage for the group V materials by a mutual chemical reaction stage for the materials. COPYRIGHT: (C)2007,JPO&INPIT
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