FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR ELEMENT, AND EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor and a semiconductor element such that a leak current from a Schottky junction electrode is reduced, and to provide an epitaxial substrate for manufacturing the field-effect transistor or semiconductor element whose leak current from the Schottky junction electrode is reduced. SOLUTION: An HEMT 1 has a supporting substrate 3, a GaN-based compound layer 5 provided on the supporting substrate 3, an AlXGa1-XN (0XGa1-XN layer 7, and a source electrode 11 and a drain electrode 13 provided on the AlXGa1-XN layer 7. Then the GaN-based compound layer 5 includes a high-purity GaN layer 5a made of GaN crystal and an Al-doped GaN layer 5b. The Al density of the Al-doped GaN layer 5b is 2×1020to 5×1021cm-3. COPYRIGHT: (C)2007,JPO&INPIT