| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device mounted with an ESD protection device suitably adaptive to transistors having mutually different breakdown voltages, and to provide its manufacturing method. SOLUTION: The semiconductor device has a first ESD protecting circuit 1A including a first transistor 3 and a first ballast resistor 4, and a second ESD protecting circuit 1B including a second transistor 5 and a second ballast resistance 6. The impurity density of a second diffusion region constituting the first ballast resistance 4 is lower than the impurity density of a fourth diffusion region constituting the second ballast resistance 6. COPYRIGHT: (C)2007,JPO&INPIT
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