| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a nitride semiconductor substrate capable of drastically shortening a contour processing time of an independent type nitride semiconductor substrate. SOLUTION: First, a substrate 1 of a circular independent type GaN grown by an HVPE method, etc. is prepared. A mark-off line 2 is provided to the substrate 1 in parallel to a crystal azimuth for performing an OF process by use of an X-ray diffraction instrument. Next, after the substrate 1 is set so as to make the mark-off line 2 of the substrate 1 parallel with a straight part of an OF 3a of a tool 3 for performing ultrasonic process, the ultrasonic process is performed. Thus, the substrate 1 is precisely hollowed out in a circle having a flat OF and IF complying with a shape of the tool 3. Thus, the OF process, the IF process and an outer diameter process can be simultaneously performed. COPYRIGHT: (C)2007,JPO&INPIT
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