MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a silicon nitride film of high nitrogen concentration with thin film thickness as a gate insulating film. SOLUTION: A silicon oxide film 20 is formed on a semiconductor substrate 10. Nitrogen is introduced into the silicon oxide film by a plasma nitriding method to form a first silicon oxynitride film 30. Nitrogen is introduced into the first silicon oxynitride film by the plasma nitriding method to form a second silicon oxynitride film 40. COPYRIGHT: (C)2007,JPO&INPIT