| 摘要 |
PROBLEM TO BE SOLVED: To reduce a margin for processing shape and alignment which increases effect as a factor blocking reduction in an area of an LSI involved in making fine a semiconductor process. SOLUTION: The semiconductor device has a conductive pattern 102 formed on a substrate 100, a conductive land 103 formed in contact with at least a part of an upper surface of the conductive pattern 102, and a conductive part 104 formed on the conductive land 103. The conductive part 104 is electrically connected to the conductive pattern 102 via the conductive land 103. COPYRIGHT: (C)2007,JPO&INPIT
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