| 摘要 |
<p>A method for removing a growable residue of a photo mask is provided to prevent undesirable pattern transfer from being occurred by removing growable residues of a photo mask. A sulfuric acid peroxide mixture(SPM) cleaning is performed as a first cleaning process(110). A standard clean(SC)-1 cleaning is preformed as a second cleaning process(120). A cleaning using hot deionized water is performed(130). The cleaned photo mask is loaded in a plasma chamber. Plasma including inert gas, water, and oxygen is generated in the plasma chamber to remove a growable residue for at least 90 seconds. The growable residue includes SO4.</p> |
