| 摘要 |
A memory device includes N regular rows of memory cells, L redundant rows of memory cells, a shift circuit, and N word lines, where N > 1 and L > 1. Each word line is associated with a designated row and an alternate row that is L rows away from the designated row. The shift circuit receives the N word lines and couples each word line to either the designated row or the alternate row for that word line. If L is two, then the shift circuit couples even-numbered word lines to even-numbered rows and odd-numbered word lines to odd-numbered rows. The shift circuit may couple each word line to (1) the designated row if this row is non-defective and a preceding word line is not shifted down or (2) the alternate row otherwise.
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