| 摘要 |
PROBLEM TO BE SOLVED: To reduce capacitance in a lower portion of a trench with respect to a semiconductor device. SOLUTION: When a trench 23 is formed, the trench is made a shape of "γ" which is projected toward the inside of the trench. As a result, the surface area of the trench is reduced, and particularly, capacitance which is formed in conductor material-insulating film-semiconductor layer in a trench bottom can be reduced. Moreover, the trench bottom is curved in its shape to relax electric field concentration in the trench bottom. COPYRIGHT: (C)2007,JPO&INPIT
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