发明名称 |
Gallium nitride based high-electron mobility devices |
摘要 |
A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
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申请公布号 |
US2006278892(A1) |
申请公布日期 |
2006.12.14 |
申请号 |
US20050147341 |
申请日期 |
2005.06.08 |
申请人 |
HARRIS CHRISTOPHER;GEHRKE THOMAS;WEEKS T W JR;BASCERI CEM |
发明人 |
HARRIS CHRISTOPHER;GEHRKE THOMAS;WEEKS T. W.JR.;BASCERI CEM |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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