SEMICONDUCTOR ABRASIVE

摘要

A semiconductor abrasive that excels in dispersion stability and polishing speed and that especially in the use in multistage processing CMP, exhibits stable polishing characteristics with less influence even in instances of contact with alkaline abrasives. There is provided an abrasive for chemomechanical polishing for use in polishing of any surface to be polished in the production of semiconductor integrated-circuit units, which abrasive comprises cerium oxide abrasive grains, water and a dicarboxylic acid of the formula: HOOC(CH<SUB>2</SUB>)<SUB>n</SUB>COOH (1) (wherein n is an integer of 1 to 4) and exhibits a pH value of 3.5 to 6 at 25°C.