A method of making a semiconductor device includes forming a wafer (10) having a substrate (48) and an interconnect structure (50) over the substrate. The wafer also includes a plurality of die areas (12, 14, 16, 18) and a street (20) located between a first die area of the plurality and a second die area of the plurality. A separation structure (38) that includes metal is located in the interconnect structure (50). At least a portion of the separation structure (50) is located in a saw kerf (34) of the street. The separation structure (50) is arranged to provide a predefined separation path for separating the first die area during a singulation process.
申请公布号
WO2006007144(A3)
申请公布日期
2006.12.14
申请号
WO2005US17705
申请日期
2005.05.19
申请人
FREESCALE SEMICONDUCTOR, INC.;UEHLING, TRENT, S.;HESS, KEVIN, J.