METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to reduce property change due to a high temperature annealing and to improve by performing the high temperature annealing on the whole of a gate pattern to form metal silicide. A first silicide metal is layered on the whole surface of a substrate where a gate pattern is formed(360). A first low temperature annealing is performed to form a metal silicide layer(370). An interlayer dielectric is layered on the whole surface of the substrate where the metal silicide layer is formed(390). The interlayer dielectric is etched to expose an upper surface of the gate pattern in the middle of the interlayer dielectric(400). A second silicide metal is stacked on the substrate(410). A second low temperature annealing is performed to form the whole gate pattern as metal silicide(420). A high temperature annealing is performed(440).