Method for forming buried contacts in a semiconductor memory device with deep trench capacitor

摘要

A method for forming a semiconductor memory device with buried contacts. A substrate (100) is provided, wherein the substrate has recessed gates (118) and deep trench capacitor devices (102) therein. Protrusions (120) of the recessed gates and upper portions (104) of the deep trench capacitor devices are revealed. Spacers (124) are formed on sidewalls of the upper portions and the protrusions. Buried portions of conductive material (130) are formed in spaces between the spacers. The substrate, the spacers and the buried portions to form parallel shallow trenches are patterned to form parallel shallow trenches (132) for defining active regions. A layer of dielectric material is formed in the shallow trenches, wherein some of the buried portions serve as buried contacts.