COMPOUND SEMICONDUCTOR DEVICE, PRODUCTION MEHTOD OF COMPOUND SEMICONDUCTOR DEVICE AND DIODE

摘要

A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the silicon carbide crystal substrate has a surface assuming a (0001) crystal plane, and the boron-phosphide-based semiconductor layer is composed of a 11111 crystal stacked on and in parallel with the {0001} crystal plane of the silicon carbide crystal substrate, and when the number of the layers contained in one periodical unit of an atomic arrangement in the [0001] crystal orientation of the silicon carbide crystal substrate is n, an n-layer-stacked structure included in the { 111 } crystal plane forming the { 111 } crystal has a stacking height virtually equal to the c-axis lattice constant of the silicon carbide crystal substrate.