| 摘要 |
<p>Method involves preparation of the semiconductor component substrate, applying of a contact material on the surface of the semiconductor component substrate, heating of the semiconductor component substrate including the contact material deposited on it, on the first temperature above the manufacturing ambient temperature of semiconductor component. The method then involves cooling of the contacting material deposited on the semiconductor component substrate on a second temperature whereby the second temperature lies below the manufacturing ambient temperature of the semiconductor component. Independent claims are also included for the following: (A) Semiconductor component; and (B) Device for connecting metal contact material on a surface of a semiconductor component substrate.</p> |
