发明名称 |
Method of fabricating a metal-semiconductor contact in semiconductor devices |
摘要 |
<p>The method involves applying a layer system (12) to a semiconductor component, opening at least one window (13) in an electrically insulating area of the layer system, and applying a metal in an area of the window to ensure contact of the metal to the semiconductor material in the area of the window.</p> |
申请公布号 |
EP1732123(A2) |
申请公布日期 |
2006.12.13 |
申请号 |
EP20060011596 |
申请日期 |
2006.06.06 |
申请人 |
ATMEL GERMANY GMBH |
发明人 |
DIETZ, FRANZ;DUDEK, VOLKER;FLORIAN, TOBIAS;GRAF, MICHAEL |
分类号 |
H01L21/768;H01L21/283 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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