发明名称 Method of fabricating a metal-semiconductor contact in semiconductor devices
摘要 <p>The method involves applying a layer system (12) to a semiconductor component, opening at least one window (13) in an electrically insulating area of the layer system, and applying a metal in an area of the window to ensure contact of the metal to the semiconductor material in the area of the window.</p>
申请公布号 EP1732123(A2) 申请公布日期 2006.12.13
申请号 EP20060011596 申请日期 2006.06.06
申请人 ATMEL GERMANY GMBH 发明人 DIETZ, FRANZ;DUDEK, VOLKER;FLORIAN, TOBIAS;GRAF, MICHAEL
分类号 H01L21/768;H01L21/283 主分类号 H01L21/768
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