| 摘要 |
An LED and a method for manufacturing the same are provided to simplify the manufacturing process and to improve reliability by bonding a fluorescent substrate to upper and lower surfaces of a GaN light emitting structure using wafer fusion bonding. An active layer(120) and a p-type nitride semiconductor layer(130) are sequentially stacked on an n-type nitride semiconductor layer, thereby forming a light emitting structure. An n-type fluorescent substrate(100) is bonded on the lower of the n-type nitride semiconductor layer, and a p-type fluorescent substrate(140) is bonded on the upper of the p-type nitride semiconductor layer by wafer fusion bonding. A p-type electrode(150) is formed on the upper of the p-type fluorescent substrate. An n-type electrode(160) is formed on the lower of the n-type fluorescent substrate.
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