发明名称 |
Method for fabricating nitride-based compound semiconductor element |
摘要 |
A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11 ; forming, on part of the upper surface of the nitride semiconductor layer 13 , a conductive film 14 made of an electron emitting layer 14 b and a dry etching mask layer 14 a from bottom to top; performing dry etching on the nitride semiconductor layer 13 ; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
|
申请公布号 |
US7148149(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20040017681 |
申请日期 |
2004.12.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHNO HIROSHI;TAMURA SATOSHI;UEDA TETSUZO |
分类号 |
H01L21/302;H01L21/306;H01L21/3063;H01L21/3065;H01L21/308;H01L33/00 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|