Semiconductor device, electro-optic device, integrated circuit, and electronic apparatus

摘要

A method of manufacturing a semiconductor is provided. The method includes the steps of forming a priming insulation film on a substrate, forming a first insulation film on the priming insulation film, forming an opening with a diameter of d₁ in the first insulation film, and forming a second insulation film on the first insulation film including the opening The film thickness distribution of the second insulation film in the step of forming the second insulation film is ±y %, wherein the diameter d₁ of the opening satisfies the following relationship: d₁<=6500/y+85 nm.