| 摘要 |
A method and program for calculating ion distribution that reduce an error which will occur in the case of calculating ion distribution created by performing ion implantation on a crystalline member more than one time. An ion distribution specification step specifies existing ion distribution which has been created by performing ion implantation n (n is a natural number) times. An ion distribution assumption step assumes ion distribution which will be created by the (n+1)th ion implantation. A differential calculation step calculates the differential between the ion distribution, which will be created by the (n+1)th ion implantation and which is assumed by the ion distribution assumption step, and the existing ion distribution specified by the ion distribution specification step. An ion distribution calculation step calculates ion distribution created by the (n+1)th ion implantation by calculating the dose of ions implanted by the (n+1)th ion implantation from the differential calculated by the differential calculation step.
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