发明名称 |
Semiconductor device and method for its preparation |
摘要 |
A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
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申请公布号 |
US7148094(B2) |
申请公布日期 |
2006.12.12 |
申请号 |
US20040808353 |
申请日期 |
2004.03.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;TAKAYAMA TORU;TAKEMURA YASUHIKO;MIYANAGA AKIHARU;OHTANI HISASHI;TAKEYAMA JUNICHI |
分类号 |
H01L21/336;H01L21/20;H01L21/84;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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